Subject:
Electrical & Computer Engineering (ECE)
Catalog number:
639
Unit weight:
0.50
Meet type:
LEC
Grading basis:
NUM
Cross-listing(s):
N/A
Requisites:
N/A
Description:
Growth and structure of amorphous silicon (morphology, growth mechanisms, silicon bonding structure, continuous random network, hydrogenation). Electronic states in amorphous silicon (density of states, band tails, optical transitions, defects and defect states). Doping of amorphous silicon, defect reactions and metastable effects. Electronic transport and recombination in amorphous semiconductors. Using amorphous silicon in practice (contacts and surfaces). Applications of amorphous silicon (Schottky diodes, solar cells, optical and radiation sensors, thin film transistors, flat panel displays, large-area electronics).
Topic titles:
N/A
Faculty:
Engineering (ENG)
Academic level:
GRD
Course ID:
010650